王磊

研究领域

研究领域为计算凝聚态物理，主要致力于利用第一原理计算、分子动力学等材料计算方法研究拓扑电子、声子材料和低维纳米电子信息材料（超导材料、电荷密度波材料和磁性材料等）

研究方向

1. 超导材料和电荷密度波材料的第一性原理设计；

2. 磁性拓扑电子材料计算与设计；

3. 材料可合成性能计算评价；

4. 基于第一性原理的物质结构和相变研究；

目前在研的科研项目

     1.银河集团:198net高层次人才引进科研启动项目 获批经费：250万 起止时间：2022.8- 2024.7

2.内蒙古自治区自然学基金青年科学基金 获批经费：10万 起止时间：2023.1- 2025.12

3.国家自然学基金青年科学基金 获批经费：30万 起止时间：2024.1- 2026.12

奖励、荣誉和学术兼职

获奖、荣誉

1. 2021.12 博士研究生国家奖学金

2. 2022.05 师昌绪奖学金一等奖

3. 2022.05 校优秀毕业生

4. 2022.05 安徽省优秀毕业生

5. 2022.06 校优秀博士学位论文

6.   2022.07 银河集团:198net“骏马计划”B1岗

7.   2022.08 中国科学院院长特别奖

8.   2023   中国科学院优秀博士学位论文

学术兼职

美国物理学会旗下杂志Physical Review B和Physical Review Materials审稿人。

主要论著

通讯作者：

1. T. Han, S. Wang, B. Han, Y. Liu, F. Li*, and L. Wang*, Two-Dimensional Potassium Borides with Hidden Kagome-like Lattice: Topological Semimetals, van Hove Singularities, and Superconductivity, Phys. Rev. B 107, 235154 (2023).  (IF: 3.7)

2. S. Wang, S. Wang, R. Liu, L. Sai, L. Wang*, and F. Li*, Coexistence of Electronic and Phononic Dirac Points in TiB₂ Monolayer with Inverse Sandwich Motif, J. Phys. Chem. C (2023). (IF: 3.7)

第一作者，共同第一作者和其他：

1. L. Wang, Y. Shi, M. Liu, A. Zhang, Y.-L. Hong, R. Li, Q. Gao, M. Chen*, W. Ren, H.-M. Cheng, Y. Li, and X.-Q. Chen*, Intercalated Architecture of MA₂Z₄ Family Layered van Der Waals Materials with Emerging Topological, Magnetic and Superconducting Properties. Nature Communications 12, 2361 (2021).   (IF: 16.6)

2. L. Wang, M. Liu, J. Li, R. Li, H. Ma, and X.-Q. Chen*, Topological Nodal Line and Superconductivity of Highly Thermally Stable Two-Dimensional TiB₄. Phys. Rev. B 104, 195123 (2021).  (IF: 3.7)

3. L. Wang, Y. Jiang, J. Liu, S. Zhang, J. Li, P. Liu, Y. Sun, H. Weng, and X.-Q. Chen*, Two-Dimensional Obstructed Atomic Insulators with Fractional Corner Charge in the MA₂Z₄ Family, Phys. Rev. B 106, 155144 (2022). (IF: 3.7)

4. Y.-L. Hong, Z. Liu, L. Wang, T. Zhou, W. Ma, C. Xu, S. Feng, L. Chen, M.-L. Chen, D.-M. Sun, X.-Q. Chen, H.-M. Cheng, and W. Ren*, Chemical Vapor Deposition of Layered Two-Dimensional MoSi₂N₄ Materials. Science 369, 670 (2020). (Co-first author)  (IF: 56.9)

5. Z. Liu, L. Wang, Y.-L. Hong, X.-Q. Chen, H.-M. Cheng, and W. Ren*, Two-Dimensional Superconducting MoSi₂N₄(MoN)_4n Homologous Compounds, National Science Review nwac273 (2023). (Co-first author)  (IF: 20.6)

6. Z. Guo, L. Wang, M. Han, E. Zhao, L. Zhu, W. Guo, J. Tan, B. Liu, X.-Q. Chen, and J. Lin, One-Step Growth of Bilayer 2H–1T′ MoTe₂ van Der Waals Heterostructures with Interlayer-Coupled Resonant Phonon Vibration, ACS Nano 16, 11268 (2022). (Co-first author) (IF: 17.1)

7. S.-C. Zhu, L. Wang, J.-Y. Qu, J.-J. Wang, T. Frolov, X.-Q. Chen, and Q. Zhu*, Computational Design of Flexible Electrides with Nontrivial Band Topology. Phys. Rev. Materials 3, 024205 (2019). (Co-first author)  (IF: 3.4)

8. C. Shen, L. Wang, D. Wei, Y. Zhang, G. Qin, X.-Q. Chen, and H. Zhang*, Two-dimensional layered MSi₂N₄ (M = Mo, W) as promising thermal management materials: a comparative study. Phys. Chem. Chem. Phys. 24, 3086-3093 (2022). (Co-first author)  (IF:3.3)

9. G., S. Ghosh, L. Wang, J. Bursik, A. Grytsiv, M. Kerber, E. Bauer, R. C. Mallik, X.-Q. Chen, M. Zehetbauer, P. Rogl, Half-Heusler alloys: Enhancement of ZT after severe plastic deformation (ultra-low thermal conductivity). Acta Materialia 183, 285–300 (2020). (IF:9.4)

10. R. Li, J. Li, L. Wang, J. Liu, H. Ma, H.-F. Song, D. Li, Y. Li, X.-Q. Chen, Underlying Topological Dirac Nodal Line Mechanism of the Anomalously Large Electron-Phonon Coupling Strength on a Be(0001) Surface. Phys. Rev. Lett. 123, 136802 (2019).  (IF:8.6)

11. J. Li, L. Wang, J. Liu, R. Li, Z. Zhang, X.-Q. Chen, Topological phonons in graphene. Phys. Rev. B 101, 081403(R) (2020).  (IF: 3.7)

12. S. Ullah, L. Wang, J. Li, R. Li, X.-Q. Chen, Structural, elastic, and electronic properties of topological semimetal WC-type MX family by first-principles calculation. Chinese Phys. B 28, 077105 (2019). (IF: 1.7)

13. Q. Xie, L. Wang, J. Li, R. Li, X.-Q. Chen, General principles to high-throughput constructing two-dimensional carbon allotropes. Chinese Phys. B 29, 037306 (2020). (IF: 1.7)